| PART |
Description |
Maker |
| IS61DDP2B22M18A IS61DDP2B21M36A/A1/A2 IS61DDP2B22M |
2Mx18, 1Mx36 36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61DDPB22M18A IS61DDPB22M18A/A1/A2 IS61DDPB21M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7S3218T4C K7S3236T4C K7S3236T4C-FECI45 K7S3236T4C |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7R320982M K7R321882 K7R321882M K7R323682 K7R32368 |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 1Mx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7D323674C-HC33 K7D323674C-GC33 K7D323674C-GC40 K7 |
1Mx36 & 2Mx18 SRAM
|
Samsung semiconductor
|
| IS61QDPB41M36A2 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7P321874C |
1Mx36 & 2Mx18 SRAM
|
Samsung Electronics
|
| K7S3236T4C08 K7S3218T4C |
1Mx36 & 2Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7I323682M K7I321882M K7M161825A-QCI65 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7B323635C K7B323635C-PC750 |
1Mx36 & 2Mx18 Synchronous SRAM
1M X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Samsung semiconductor
|
| GS8342R18GE-267 GS8342R36GE-167 GS8342R18E-267 GS8 |
36Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 8 DDR SRAM, 0.45 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 2M X 18 DDR SRAM, 0.45 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 9 DDR SRAM, 0.5 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 9 DDR SRAM, 0.45 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 1M X 36 DDR SRAM, 0.5 ns, PBGA165
36Mb SigmaCIO DDR-II Burst of 4 SRAM 2M X 18 DDR SRAM, PBGA165
|
GSI Technology, Inc.
|
